Effect of Electromagnetic Radiation at Vs, IR, UV on The Properties of Transistor with an Exposed Device

Abstract

The input and output (I-V) characteristics of exposed transistor device under VS, UV, and IR radiation effect has been studied experimentally. The results shown of input (I-V) characteristics (V_bi) increased with increasing energy of radiation.

At ( V_CE=0 V, and 5 V ) has been calculated input voltage (V_bi) and input resistant (R_in) at under every the effect of the above wavelengths and without effect, where we notice an increase in input voltage (V_bi) and input resistant (R_in) with the increase in the wavelengths used when compared it with"state without effect.

The"current gain (β_DC) and output resistance (R_out), which stand for the transistor's output properties, were also calculated once with the effect and once without the effect, and the results were compared, The infrared wavelength (395 nm) and the red wavelength (630–650 nm) were found to cause a drop in the gain in the current (β_DC), while the other wavelengths used caused an increase. Regarding the input resistance (R_out), it rises as the study's chosen wavelength is employed."

In addition, the curve of the input properties of the power transistor under the influence of electromagnetic radiation slides to the right of the properties curve without any effect, and the amount of sliding depends on the wavelength and the power of the source used, as well as the output properties slide upward for each value of the base current (I_B).