Structural and Optical Properties of GO- doped (TiO2:MoS2) Films Prepared by Pulsed Laser Deposition

Abstract

With focused Nd:YAG laser beam at 400mJ with a second radiation at 1064nm (pulse width 9ns) repetition frequency (6Hz), for 200 laser pulses incident on target surface, pulsed laser deposition (PLD) had been utilized for preparing (TiO2:MoS2)1-x(GO)x films at RT onto glass substrates at various concentration of GO (0.06, 0.12, 0.18, 0.24 and 0.30). The goal of the investigation is to determine how GO content affects the films' morphological, structural, electrical, and optical properties. Various methods, including Atomic Force Microscope (AFM), X-ray diffraction (XRD), UV-Vis spectroscopy, and the Hall Effect, have been used for characterizing thin films. According to the findings, films have been polycrystalline and displayed small peaks in the case when doped with GO material. The deposited TiO2:MoS2's XRD peaks have been improved as the GO concentration rose. In the case when GO is added to a structure, the average diameter and roughness are measured using AFM, with GO ratio 0.30 yielding the highest value. Optical transmission has been examined by using a UV-vis spectrophotometer. It was discovered that as GO content in films increased, so did transmittance.