Passive Q-Switching of Solar Laser Cavities Using a GaAS Semiconductor Crystal

Abstract

The results of numerical experiments on the use of a gallium arsenide semiconductor crystal as a Q-switching element and, at the same time, an output mirror in solar laser cavities are presented. The results of mathematical modeling show that at optimal concentrations of (antistructural) defects in a gallium arsenide crystal, a sequence of short pulses can be obtained.